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Abstract Organic mixed ionic and electronic conductors are of significant interest for bioelectronic applications. Here, three different isoindigoid building blocks are used to obtain polymeric mixed conductors with vastly different structural and electronic properties which can be further fine‐tuned through the choice of comonomer unit. This work shows how careful design of the isoindigoid scaffold can afford highly planar polymer structures with high degrees of electronic delocalization, while subtle structural modifications can control the dominant charge carrier (hole or electron) when probed in organic electrochemical transistors. A combination of experimental and computational techniques is employed to probe electrochemical, structural, and mixed ionic and electronic properties of the polymer series which in turn allows the derivation of important structure–property relations for this promising class of materials in the context of organic bioelectronics. Ultimately, these findings are used to outline robust molecular‐design strategies for isoindigo‐based mixed conductors that can support efficient p‐type, n‐type, and ambipolar transistor operation in an aqueous environment. 

Abstract A series of semiconducting small molecules with bithiophene or bis‐3,4‐ethylenedioxythiophene cores are designed and synthesized. The molecules display stable reversible oxidation in solution and can be reversibly oxidized in the solid state with aqueous electrolyte when functionalized with polar triethylene glycol side chains. Evidence of promising ion injection properties observed with cyclic voltammetry is complemented by strong electrochromism probed by spectroelectrochemistry. Blending these molecules with high molecular weight polyethylene oxide (PEO) is found to improve both ion injection and thin film stability. The molecules and their corresponding PEO blends are investigated as active layers in organic electrochemical transistors (OECTs). For the most promising molecule:polymer blend (P4E4:PEO), p‐type accumulation mode OECTs with µA drain currents, μS peak transconductances, and a µC* figure‐of‐merit value of 0.81 F V⁻¹cm⁻¹s⁻¹are obtained.